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| Voltage Regulator Preliminary Data TLE 4274 Features * * * * * Output voltage: 3.3 V/2.5 V 4 % Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics Ordering Code Package Q67006-A9348 P-TO252-3-1 P-SOT223-4-1 Type w TLE 4274 DV 33 TLE 4274 GSV 33 Q67006-A9289 P-SOT223-4-1 w TLE 4274 GSV 25 Q67006-A9359 P-SOT223-4-1 SMD = Surface Mounted Device w New type P-TO252-3-1 (D-PAK) Functional Description The TLE 4274 is a voltage regulator available in a SOT223 and TO252 package. The IC regulates an input voltage up to 40 V to VQrated = 3.3 V/2.5 V. The maximum output current is 400 mA. The IC is short-circuit proof and incorporates temperature protection that disables the IC at over temperature. Dimensioning Information on External Components The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed at values CQ 10 F and an ESR of 3 within the operating temperature range. Semiconductor Group 1 1998-11-01 TLE 4274 Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: * Overload, * Overtemperature, * Reverse polarity. Pin Configuration (top view) P-SOT223-4-1 P-TO252-3-1 (D-PAK) GND GND Q 1 2 3 AEP02282 4 GND 1 Q AEP02561 3 Figure 1 Pin Definitions and Functions Pin No. 1 2, 4 3 Symbol I GND Q Function Input; block to ground directly at the IC with a ceramic capacitor. Ground; P-TO252-3-1: internally connected to heatsink Output; block to ground with capacitor CQ 10 F Semiconductor Group 2 1998-11-01 TLE 4274 Temperature Sensor Saturation Control and Protection Circuit 3 Control Amplifier Q 1 Buffer Bandgap Reference 2 GND AEB02283 Figure 2 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4274 Absolute Maximum Ratings Tj = - 40 to 150 C Parameter Symbol Limit Values min. Voltage Regulator Input Voltage Current Output Voltage Current Ground Current Temperature Junction temperature Storage temperature Tj Tstg - - 50 150 150 C C - - IGND - 100 mA - VQ IQ - 1.0 - 40 - V - - Internally limited VI II - 42 - 45 - max. Unit Test Condition V - - Internally limited Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circut. Operating Range Parameter Input voltage Junction temperature Thermal Resistance Junction ambient Junction ambient Junction case Junction case 1) 2) 2 Symbol VI Tj 4.7 4.0 Limit Values min. max. 40 40 150 Unit Remarks V C V33 version V25 version - - 40 Rthja Rthja Rthjc Rthjc - - - - 100 70 25 4 K/W SOT2231) K/W TO2522) K/W SOT223 K/W TO252 soldered in, 1 cm copper area at pin 4, FR4 soldered in, minimal footprint, FR4 Semiconductor Group 4 1998-11-01 TLE 4274 Characteristics VI = 6 V; - 40 C < Tj < 150 C (unless otherwise specified) Parameter Output voltage V33-Version Output voltage V25-Version Output current limitation1) Current consumption; Iq = II - IQ Current consumption; Iq = II - IQ Drop voltage1) V33-Version Drop voltage1) V25-Version Load regulation Line regulation Power supply ripple rejection Temperature output voltage drift 1) Symbol VQ VQ IQ Iq 3.17 2.4 400 - Limit Values min. typ. 3.3 2.5 600 100 max. 3.44 2.6 - 220 Unit Measuring Condition 5 mA < IQ < 400 mA 4.7 V < VI < 40 V 5 mA < IQ < 400 mA 4.0 V < VQ < 40 V - V - mA A IQ = 1 mA Iq Iq Vdr Vdr - 8 20 15 30 1.2 1.5 70 25 - - mA mA V V mV mV dB IQ = 250 mA IQ = 400 mA IQ = 300 mA Vdr = VI - VQ IQ = 300 mA Vdr = VI - VQ IQ = 5 mA to 300 mA - - - - - - 0.7 1.0 40 10 60 0.5 VQ VQ PSRR Vl = 12 V to 32 V IQ = 5 mA fr = 100 Hz; Vr = 0.5 VSS Q --------- dV dT mV/K - Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 6 V. Semiconductor Group 5 1998-11-01 TLE 4274 1 TLE 4274 GSV33 4 Q V CQ 100 F C 100 nF 2, 4 GND CQ 10 F VQ R Load AES0284 Figure 3 Measuring Circuit 4.5 to 40V Input 1 4Q 3.3V / 2.5V Output 100nF C TLE 4274 GSV33 2, 4 GND 20F CQ AES02285 Figure 4 Application Circuit 1 Semiconductor Group 6 1998-11-01 TLE 4274 4.5 - 40 V C 470 nF 1 k GND TLE 4276 Q CQ1 20 F INH 10 V / 5 V e.g. to sensor e.g. to C TLE 4274 GSV33 Q CQ2 20 F 3.3 V to C GND AES02579 Figure 5 Application Circuit 2 (Voltage Dropper) Semiconductor Group 7 1998-11-01 TLE 4274 S Typical Performance Characteristics: Drop Voltage Vdr versus Output Current IQ 1200 AED02286 Output Current IQ versus Input Voltage VI 800 mA AED02287 V dr mV 40 C Q 600 800 25 C T j = 25 C VQ = 0 V 400 600 400 125 C 200 200 0 0 0 100 200 300 mA 400 Q 0 10 20 30 40 V 50 V Current Consumption Iq versus Output Current IQ (high load) 60 mA AED02267 Current Consumption Iq versus Output Current IQ (low load) 0.6 mA AED02268 q T j = 25 C V = 13.5 V 40 q T j = 25 C V = 13.5 V 0.4 30 0.3 20 0.2 10 0.1 0 0 100 200 300 400 mA Q 600 0 0 10 20 30 40 mA Q 60 Semiconductor Group 8 1998-11-01 TLE 4274 S Typical Performance Characteristics: Output Voltage VQ versus Junction Temperature Tj (V33-Version) 3.50 AED02288 Input Current Iq versus Input Voltage VI (V33-Version) 3.5 mA 3.0 AED01969 VQ V 3.40 V = 6.0 V 3.30 2.5 2.0 1.5 1.0 3.20 T j = 25 C R L = 3.3 k 3.10 0.5 3.00 0 -2 -50 2.90 40 0 40 80 120 C 160 Tj -25 0 25 V 50 V Semiconductor Group 9 1998-11-01 TLE 4274 Package Outlines P-SOT223-4-1 (SMD) (Plastic Small Outline Transistor) A 6.5 0.2 3 0.1 0.1 max 1.6 0.1 B 7 0.3 15max 4 1 0.7 0.1 2 3 2.3 4.6 0.5 min 0.28 0.04 0.25 M A 0.25 M B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" SMD = Surface Mounted Device Semiconductor Group 10 Dimensions in mm 1998-11-01 3.5 0.2 +0.2 acc. to DIN 6784 TLE 4274 P-TO252-3-1 (D-PAK) (Plastic Transistor Single Outline) 6.5 +0.15 -0.10 A 5.4 0.1 B 2.3 +0.05 -0.10 0.9 +0.08 -0.04 1 0.1 9.9 0.5 6.22 -0.2 0.8 0.15 0.51 min 0.15 max per side 3x 0.75 0.1 2.28 0...0.15 0.5 +0.08 -0.04 1 0.1 4.57 0.25 M AB 0.1 GPT09051 All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" SMD = Surface Mounted Device Semiconductor Group 11 Dimensions in mm 1998-11-01 |
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